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| NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base-Emitter speed-up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications. Absolute Maximum Ratings: Collector-Base Voltagte (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Peak (tp = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation (TC +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to + 175C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICEO ICEV Test Conditions VCEO = 400V, IB = 0 VCE = 600V, VBE = 1.5V, Note 1 VCE = 600V, VBE = 1.5V, TC = +100C, Note 1 Min - - - - 400 - - - - Typ - - - - - - - - - Max 1 100 2 175 - 2.0 2.5 3.0 5.0 Unit mA A mA mA V V V V V Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage IEBO VCE(sat) VEB = 2V, IC = 0, Note 1 IC = 10A, IB = 0.5A IC = 18A, IB = 1.8A IC = 22A, IB = 2.2A IC = 28A, IB = 5.6A VCEO(sus) IC = 100mA, Note 1 Note 1. Pulsed: Pulse Width = 300s, Duty Cycle = 1.5%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Base-Emitter Saturation Voltage Symbol VBE(sat) Test Conditions IC = 10A, IB = 0.5A, Note 1 IC = 18A, IB = 1.8A, Note 1 IC = 22A, IB = 2.2A, Note 1 Min - - - 30 20 - Typ - - - - - - Max 2.5 3.0 3.3 - - 4 Unit V V V DC Current Gain hFE VF ton ts tf ts tf ts tf VCE = 5V, IC = 10A VCE = 5V, IC = 18A IF = 22A VCC = 250V, IC = 10A, IB1 = 0.5A, VBE(off) = -5V Diode Forward Voltage Resistive Switching Times Turn-On Time Storage Time Fall Time Inductive Switching Times Storage Time Fall Time Storage Time Fall Time V s s s s s s s - - - 0.35 0.8 0.25 0.6 1.5 0.6 VClamp = 250V, IC = 10A, IB1 = 0.5A, VBE(off) = -5V VClamp = 250V, IC = 20A, IB1 = 2A, VBE(off) = -5V - - - - 0.8 0.08 0.8 0.35 1.5 0.5 1.5 0.7 Note 1. Pulsed: Pulse Width = 300s, Duty Cycle = 1.5%. .600 (15.24) .060 (1.52) .173 (4.4) C C .156 (3.96) Dia. B C E E .550 (13.97) .430 (10.92) B .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
Price & Availability of NTE256
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